IPD053N08N3 G – INFINEON

Part Number:

IPD053N08N3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

80 V, 90 A, 4.4 mOhm N‑Channel MOSFET, TO‑252‑3 Package

Datasheet:

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Product Details:

Overview

The IPD053N08N3 G is an 80V, 90A N-Channel MOSFET manufactured by Infineon Technologies. This power MOSFET offers a low on-state resistance of 4.4 mOhm, making it suitable for high-efficiency power switching applications. It is packaged in a TO-252-3 housing for effective thermal management and compact board placement.

Key Features

80V Drain-Source Voltage
90A Continuous Drain Current
4.4 mOhm On-State Resistance (RDS(on))
N-Channel Enhancement Mode

Applications

This MOSFET is commonly utilized in power management circuits and switching regulators. Its low resistance minimizes power losses, improving overall system efficiency in various electronic devices.

Synchronous Rectification
DC-DC Converters
Motor Control