IPD053N06N – INFINEON

Part Number:

IPD053N06N

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

60 V, 45 A, 5.3 mOhm N‑Channel MOSFET, TO‑252‑3 Package

Datasheet:

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Product Details:

Overview

The IPD053N06N is a discrete N-Channel MOSFET manufactured by Infineon. This power transistor is designed for switching applications requiring efficient power conversion. It features a drain-source voltage rating of 60V and a continuous drain current capability of 45A. The device exhibits a low on-state resistance of 5.3 mOhm, minimizing conduction losses. It is packaged in a TO-252-3 housing for surface mount assembly.

Key Features

60V Drain-Source Voltage
45A Continuous Drain Current
5.3 mOhm On-State Resistance
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for various power management and control circuits. Its characteristics make it appropriate for use in systems needing efficient and reliable switching performance.

Synchronous Rectification
DC-DC Converters
Motor Control