IPD042P03L3 G – INFINEON

Part Number:

IPD042P03L3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

P-Channel MOSFET, -30 V, -70 A, 4.2 mOhm, TO-252-3 Package

Datasheet:

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Product Details:

Overview

The IPD042P03L3 G is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This component is designed for power switching applications requiring efficient load control. It features a drain-source voltage rating of -30V and a continuous drain current of -70A. The device is housed in a TO-252-3 package.

Key Features

P-Channel Enhancement Mode
-30V Drain-Source Voltage (Vds)
-70A Continuous Drain Current (Id)
4.2 mOhm On-State Resistance (Rds(on))

Applications

This P-Channel MOSFET is suitable for various power management and switching circuits. Its low on-resistance contributes to reduced power dissipation in high-current scenarios, making it suitable for diverse industrial and consumer products.

DC-DC Converters
Load Switching
Power Management Circuits