N-Channel MOSFET, 650 V, 21 A, 103 mOhm
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The IPBE65R115CFD7A is an N-Channel Power MOSFET manufactured by INFINEON. This component is designed for high-voltage switching applications, offering a drain-source voltage rating of 650V and a continuous drain current of 21A. It features a typical on-state resistance (Rds(on)) of 103 mOhm. The device is supplied in a through-hole package.
This MOSFET is suitable for use in various power electronics applications requiring efficient and reliable switching at high voltages. Its characteristics make it appropriate for use in several different environments.