IPB200N25N3 G – INFINEON

Part Number:

IPB200N25N3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N-Channel MOSFET, 250 V, 64 A, 20 mOhm, TO263‑3 Package

Datasheet:

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Product Details:

Overview

The IPB200N25N3 G is an N-Channel enhancement mode MOSFET manufactured by INFINEON. This power transistor is designed for switching applications requiring efficient power conversion. It features a drain-source voltage rating of 250V and a continuous drain current of 64A. The device exhibits a typical on-state resistance of 20 mOhm and is supplied in a TO263-3 package for surface mount assembly.

Key Features

N-Channel enhancement mode
VDS = 250V
ID = 64A
RDS(on) = 20 mOhm (typical)

Applications

This MOSFET is suitable for use in a variety of power management and switching circuits. Its characteristics make it appropriate for use in systems requiring efficient and reliable power control.

Synchronous rectification
DC-DC converters
Motor control