40 V, 1.1 mOhm AECQ MOSFET in a TO‑263 Package
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The IPB180N04S4-H0 is an automotive-qualified N-channel power MOSFET manufactured by Infineon Technologies. This component is designed for switching and amplification applications, offering a drain-source voltage of 40V and a typical on-state resistance of 1.1 mOhm. It is supplied in a TO-263 package, suitable for surface mount assembly.
This MOSFET is commonly used in automotive electronic systems requiring efficient power control. Its low on-resistance minimizes power dissipation, making it suitable for demanding environments.