IPB107N20N3 G – INFINEON

Part Number:

IPB107N20N3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

SOUTH KOREA

Description:

MOSFET, 200 V, 11 mOhm, 88 A, TO263 Package

Datasheet:

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Product Details:

Overview

The IPB107N20N3 G is a discrete N-channel power MOSFET manufactured by Infineon Technologies. This component is designed for high-efficiency switching applications, offering a drain-source voltage rating of 200V and a typical on-state resistance of 11 mOhm. It is capable of handling a continuous drain current of 88A and is provided in a TO263 package for surface mount assembly.

Key Features

N-Channel Enhancement Mode
200V Drain-Source Voltage (Vds)
11 mOhm On-State Resistance (Rds(on))
88A Continuous Drain Current (Id)
TO263 Package

Applications

This MOSFET is commonly implemented in circuits requiring efficient power conversion and control. Its characteristics make it suitable for use in a variety of industrial and commercial electronic systems.

Synchronous Rectification
DC-DC Converters
Motor Control