IPB100N10S3-05 – INFINEON

Part Number:

IPB100N10S3-05

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

N-Channel MOSFET, 100 V, 100 A, 4.3 mOhm, TO263-3 Package

Datasheet:

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Product Details:

Overview

The IPB100N10S3-05 is an N-Channel enhancement mode MOSFET manufactured by Infineon. This power transistor is designed for high-efficiency switching applications, offering a drain-source voltage rating of 100V and a continuous drain current capability of 100A. It features a low on-state resistance of 4.3 mOhm and is supplied in a TO263-3 package for surface mount assembly.

Key Features

N-Channel Enhancement Mode
V_DS: 100V
I_D: 100A
R_DS(on): 4.3 mOhm

Applications

This MOSFET is commonly utilized in power management circuits and high-current switching systems. Its characteristics make it suitable for deployment in various electronic devices and industrial controls.

Synchronous Rectification
DC-DC Converters
Motor Control