IPB055N08NF2S – INFINEON

Part Number:

IPB055N08NF2S

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

80 V, 98 A N-Channel MOSFET, 5.5 mΩ, TO‑263 Package

Datasheet:

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Product Details:

Overview

The IPB055N08NF2S is an 80V N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power conversion. It features a low on-state resistance of 5.5 mΩ and a continuous drain current of 98A. The component is packaged in a TO-263 housing for surface mount assembly.

Key Features

80V Drain-Source Voltage
98A Continuous Drain Current
5.5 mΩ On-State Resistance (RDS(on))
N-Channel Enhancement Mode
TO-263 Package

Applications

This MOSFET is suitable for a range of power management and switching circuits. Its low resistance minimizes power loss, making it appropriate for demanding environments. The device’s characteristics enable its use in various power electronic systems.

Synchronous Rectification
DC-DC Converters
Motor Control