IPB029N06NF2S – INFINEON

Part Number:

IPB029N06NF2S

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N-Channel, 60 V, 119 A, 2.9 mOhm MOSFET, TO‑263 Package

Datasheet:

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Product Details:

Overview

The IPB029N06NF2S is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-efficiency switching applications, offering a drain-source voltage of 60V and a continuous drain current of 119A. It features a low on-state resistance (Rds(on)) of 2.9 mOhm and is packaged in a TO-263 (D2PAK) for surface mount assembly.

Key Features

N-Channel Enhancement Mode
Vds: 60V
Ids: 119A
Rds(on): 2.9 mOhm

Applications

This MOSFET is suitable for various power management and switching circuits. Its low on-resistance minimizes power dissipation, making it ideal for high-current applications where efficiency is critical.

Synchronous Rectification
DC-DC Converters
Motor Control