IPB025N08N3 G – INFINEON

Part Number:

IPB025N08N3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

SOUTH KOREA

Description:

N-Channel MOSFET, 80 V, 120 A, 3 mOhm, TO263‑3 Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The IPB025N08N3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power handling. It features a drain-source voltage rating of 80V and a continuous drain current capability of 120A. The device exhibits a low on-state resistance of 3 mOhm, minimizing conduction losses. It is supplied in a TO263‑3 surface-mount package.

Key Features

N-Channel enhancement mode
V_DS: 80V
I_D: 120A
R_DS(on): 3 mOhm

Applications

This MOSFET is commonly used in circuits needing efficient and controlled power switching. Its characteristics make it suitable for several power management and control implementations.

Synchronous rectification
DC-DC converters
Motor control