IPB016N06L3 G – INFINEON

Part Number:

IPB016N06L3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N-Channel MOSFET, 60 V, 180 A, 2 mOhm, TO263‑7 Package

Datasheet:

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Product Details:

Overview

The IPB016N06L3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-efficiency switching applications, offering a drain-source voltage rating of 60V and a continuous drain current of 180A. It features a low on-state resistance (Rds(on)) of 2 mOhm and is supplied in a TO263-7 package for surface mount assembly.

Key Features

N-Channel Enhancement Mode
Vds: 60V
Ids: 180A
Rds(on): 2 mOhm

Applications

This MOSFET is typically employed in power management circuits and switching regulators where efficiency and power density are critical. Its low on-resistance minimizes conduction losses, making it suitable for demanding environments.

Synchronous Rectification
DC-DC Converters
Motor Control