IPB010N06N – INFINEON

Part Number:

IPB010N06N

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N-Channel MOSFET, 60 V, 180 A, 1 mOhm, TO-263-7 Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The IPB010N06N is a discrete N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching and amplification applications, featuring a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 180A. It exhibits a low on-state resistance (Rds(on)) of 1 mOhm. The component is supplied in a TO-263-7 package for surface mount assembly.

Key Features

N-Channel enhancement mode
Vds = 60V
Id = 180A
Rds(on) = 1 mOhm (typical)

Applications

This MOSFET is commonly used in various power management and control circuits. Its low on-resistance makes it suitable for high-efficiency designs where minimizing power loss is crucial.

Synchronous rectification
DC-DC converters
Motor control