IMBG120R060M1H – INFINEON

Part Number:

IMBG120R060M1H

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

1200 V, 34.3 A N‑Channel MOSFET, 60 mOhm at 18 V

Datasheet:

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Product Details:

Overview

The IMBG120R060M1H is a discrete N-Channel MOSFET manufactured by Infineon. This component is designed for high-voltage switching applications, offering a drain-source voltage rating of 1200V. It features a continuous drain current of 34.3A and a typical on-state resistance of 60 mOhm when the gate-source voltage is 18V. The device is supplied in a standard through-hole package.

Key Features

1200V Drain-Source Voltage (Vds)
34.3A Continuous Drain Current (Id)
60 mOhm On-State Resistance (Rds(on) @ Vgs=18V)
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for use in power electronics systems requiring efficient and reliable high-voltage switching. Its characteristics make it appropriate for several power conversion and control environments.

Power Factor Correction (PFC) circuits
High-Voltage DC-DC Converters
Solid-State Relays