IMBG120R030M1H – INFINEON

Part Number:

IMBG120R030M1H

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

N‑Channel, 1200 V, 53 A, 30 mOhm MOSFET at 18 V

Datasheet:

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Product Details:

Overview

The IMBG120R030M1H is an N-Channel power MOSFET manufactured by Infineon. This component is designed for high-voltage switching applications, featuring a drain-source voltage rating of 1200V and a continuous drain current of 53A. The on-state resistance (Rds(on)) is typically 30 mOhm when the gate-source voltage is 18V. It is supplied in a standard through-hole package.

Key Features

1200V Drain-Source Voltage (Vds)
53A Continuous Drain Current (Id)
30 mOhm On-State Resistance (Rds(on) @ Vgs=18V)
N-Channel Enhancement Mode

Applications

This MOSFET is commonly utilized in power electronic circuits requiring efficient high-voltage switching. Its characteristics make it suitable for various industrial and energy-related systems.

Power Factor Correction (PFC) circuits
High-Voltage DC-DC Converters
Solar Inverters