BSZ340N08NS3 G – INFINEON

Electronic Components
 
Part Number:
BSZ340N08NS3 G
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
MALAYSIA
 
 
Description:

N‑Channel MOSFET, 80 V, 23 A, 34 mOhm, S3O8 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The BSZ340N08NS3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 80V and a continuous drain current of 23A. The device exhibits a typical on-state resistance of 34 mOhm. It is supplied in a S3O8 package, suitable for surface mount assembly.

Key Features

  • N-Channel enhancement mode
  • 80V Drain-Source Voltage
  • 23A Continuous Drain Current
  • 34 mOhm On-State Resistance (typical)

Applications

This MOSFET is suitable for a range of power switching and control applications. Its characteristics make it appropriate for use in systems needing efficient power conversion and management.

  • DC-DC Converters
  • Motor Control Circuits
  • Load Switching
 
 
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