BSZ16DN25NS3 G – INFINEON

Part Number:

BSZ16DN25NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

N-Channel MOSFET, 250 V, 10.9 A, 165 mOhm, TSDSON-8 Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The BSZ16DN25NS3 G is an N-Channel MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring a drain-source voltage of up to 250 V and a continuous drain current of 10.9 A. It features a typical on-state resistance of 165 mOhm. The component is supplied in a TSDSON-8 surface-mount package.

Key Features

N-Channel Enhancement Mode
VDS: 250V
ID: 10.9A
RDS(on): 165 mΩ (typical)
TSDSON-8 Package

Applications

This MOSFET is commonly used in power management circuits and switching regulators. Its characteristics make it suitable for various industrial and commercial electronic devices.

DC-DC converters
Motor control circuits
Power supplies