BSS215PH6327XTSA1 – INFINEON
Part Number:
BSS215PH6327XTSA1
Manufacturer:
INFINEON
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
20 V, 1.5 A, P‑Channel MOSFET, SOT23‑3
Datasheet:
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Product Details:
Overview
The BSS215PH6327XTSA1 is a P-Channel enhancement mode MOSFET manufactured by Infineon. This transistor is designed for low voltage switching applications requiring efficient power management. It features a drain-source voltage rating of 20V and a continuous drain current of 1.5A. The device is supplied in a compact SOT23-3 surface mount package, suitable for high-density circuit board layouts.
Key Features
- P-Channel Enhancement Mode
- Vds: 20V Drain-Source Voltage
- Ids: 1.5A Continuous Drain Current
- Low On-Resistance (Rds(on))
- SOT23-3 Package
Applications
This P-Channel MOSFET is commonly used in portable devices and battery-powered systems where minimizing power loss is critical. Its small size and efficient switching characteristics make it suitable for a variety of control and power management functions.
- Load Switching
- Power Management Circuits
- DC-DC Conversion
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