BSC500N20NS3 G – INFINEON

Part Number:

BSC500N20NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

200 V, 24 A, 42 mOhm N‑Channel MOSFET, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The BSC500N20NS3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon. This transistor is designed for switching applications requiring moderate voltage and current handling capabilities. It features a drain-source voltage rating of 200V and a continuous drain current of 24A. The component is housed in a TDSON-8 package, offering efficient thermal performance.

Key Features

200V Drain-Source Voltage (Vds)
24A Continuous Drain Current (Id)
42 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for various power management and switching circuits. Its characteristics make it appropriate for use in systems needing efficient power conversion and control. The TDSON-8 package facilitates effective heat dissipation in demanding environments.

DC-DC Converters
Motor Control Circuits
Power Switching Applications