BSC123N08NS3 G – INFINEON

Part Number:

BSC123N08NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N-Channel MOSFET, 80 V, 55 A, 12 mOhm, TDSON‑8 Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The BSC123N08NS3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring efficient power handling. It features a drain-source voltage rating of 80V and a continuous drain current of 55A. The device exhibits a low on-state resistance of 12 mOhm, contributing to reduced power dissipation. It is supplied in a space-saving TDSON-8 package.

Key Features

N-Channel enhancement mode
80V Drain-Source Voltage (Vds)
55A Continuous Drain Current (Id)
12 mOhm On-State Resistance (Rds(on))

Applications

This MOSFET is suitable for use in various power management and switching circuits. Its characteristics make it appropriate for environments where efficiency and compact size are important design considerations.

Synchronous Rectification
DC-DC Conversion
Motor Control