BSC047N08NS3 G – INFINEON

Electronic Components
 
Part Number:
BSC047N08NS3 G
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
MALAYSIA
 
 
Description:

80 V, 100 A, 4.7 mOhm N‑Channel MOSFET, TDSON‑8 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The BSC047N08NS3 G is an 80V, 100A N-Channel MOSFET manufactured by Infineon Technologies. This power MOSFET utilizes a low on-resistance of 4.7 mOhm, enabling efficient power conversion and switching in various applications. It is packaged in a TDSON-8 surface mount format.

Key Features

  • 80V Drain-Source Voltage
  • 100A Continuous Drain Current
  • 4.7 mOhm On-Resistance (RDS(on))
  • N-Channel Enhancement Mode
  • TDSON-8 Package

Applications

This MOSFET is designed for use in power management circuits requiring efficient switching and low power dissipation. Its characteristics make it suitable for different electronic systems.

  • Synchronous Rectification
  • DC-DC Conversion
  • Motor Control
 
 
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