BSC030P03NS3 G – INFINEON

Part Number:

BSC030P03NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

P-Channel MOSFET, 30 V, 99 A, 3 mOhm, S3O8 Package

Datasheet:

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Product Details:

Overview

The BSC030P03NS3 G is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This device is designed for switching and amplification applications requiring efficient power management. It features a drain-source voltage rating of 30V and a continuous drain current of 99A. The component is housed in an S3O8 surface-mount package.

Key Features

P-Channel Enhancement Mode
VDS: 30V
ID: 99A
RDS(on): 3 mOhm (typical)

Applications

This P-Channel MOSFET is suitable for various power control and load switching scenarios. Its low on-resistance contributes to reduced power dissipation and improved efficiency in targeted systems.

Battery Management Systems
DC-DC Conversion
Load Switching