BSC028N06NS – INFINEON

Part Number:

BSC028N06NS

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N-Channel MOSFET, 60 V, 100 A, 2.8 mOhm, SON-8 Package

Datasheet:

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Product Details:

Overview

The BSC028N06NS is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring efficient power conversion. It features a drain-source voltage rating of 60V and a continuous drain current capability of 100A. The device exhibits a low on-state resistance (Rds(on)) of 2.8 mOhm, contributing to reduced power losses. The BSC028N06NS is supplied in a compact SON-8 package.

Key Features

N-Channel enhancement mode
Vds: 60V
Ids: 100A
Rds(on): 2.8 mOhm (typical)
SON-8 package

Applications

This MOSFET is commonly used in power management circuits and switching regulators where efficiency is a primary concern. Its low on-resistance minimizes conduction losses, making it suitable for various electronic systems.

Synchronous rectification
DC-DC converters
Motor control