BSC027N04LS G – INFINEON

Part Number:

BSC027N04LS G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

40 V, 100 A, 2.7 mOhm N‑Channel MOSFET, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The BSC027N04LS G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring efficient power conversion. It features a drain-source voltage of 40V and a continuous drain current of 100A. The device exhibits a low on-state resistance of 2.7 mOhm. It is supplied in a TDSON-8 surface mount package.

Key Features

40V Drain-Source Voltage
100A Continuous Drain Current
2.7 mOhm On-State Resistance
N-Channel Enhancement Mode
TDSON-8 Package

Applications

This MOSFET is suitable for various power management and switching circuits. Its low resistance minimizes conduction losses, improving overall system efficiency. It is commonly used in circuits needing efficient switching characteristics.

Synchronous Rectification
DC-DC Converters
Motor Control