60 V, 100 A N‑Channel MOSFET, 1.45 mOhm, TDSON‑8 Package
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The BSC014N06NST is an N-Channel enhancement mode Power MOSFET manufactured by Infineon Technologies. This device is characterized by a drain-source voltage rating of 60V and a continuous drain current capability of 100A. It features a low on-state resistance (Rds(on)) of 1.45 mOhm. The component is supplied in a TDSON-8 surface mount package.
This MOSFET is suited for various power switching and control applications requiring efficient energy management. Its low on-resistance makes it suitable for designs needing minimal power dissipation.