BC817-25-7-F – DIODES INCORPORATED
Part Number:
BC817-25-7-F
Manufacturer:
Date Code:
1124
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
45 V, 0.5 A NPN Transistor, SOT‑23‑3 Package
Datasheet:
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Stock Quantity: 2800
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.5 |
| 10+ | |
| 50+ | |
| 100+ |
2800 in stock
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- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
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- Any import duties or taxes are the responsibility of the receiver
Product Details:
Overview
The DIODES INCORPORATED BC817-25-7-F is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Its critical operational characteristic lies in its 500 mA collector current capability and 45 V collector-emitter breakdown voltage, making it suitable for moderate power loads. A key design consideration for this SOT-23-3 packaged device is managing thermal dissipation; while rated for 310 mW, careful PCB layout and heatsinking are crucial in high-current, continuous operation scenarios to prevent junction over-temperature and ensure long-term reliability, a common trade-off in compact surface-mount components.
Key Features
- NPN Bipolar Junction Transistor (BJT)
- Maximum Collector Current (Ic): 500 mA
- Maximum Collector-Emitter Breakdown Voltage (Vce): 45 V
- DC Current Gain (hFE) Min: 160 @ 100mA, 1V
- Transition Frequency (fT): 100 MHz
- Package: SOT-23-3 (TO-236-3, SC-59)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-power audio amplification stages
- General-purpose switching in control circuits
- Voltage regulation pre-drivers
- Signal level shifting in digital interfaces
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